1200-V 4H-SiC Merged p-i-n Schottky Diodes With High Avalanche Capability
![2 -a) Structure of MPS diode (source: modified from [15]), b) DMOSFET... | Download Scientific Diagram](https://www.researchgate.net/publication/338632875/figure/fig3/AS:848021285777409@1579195438122/2-a-Structure-of-MPS-diode-source-modified-from-15-b-DMOSFET-source-modified.png "2 -a) Structure of MPS diode (source: modified from [15]), b) DMOSFET... | Download Scientific Diagram")
2 -a) Structure of MPS diode (source: modified from [15]), b) DMOSFET... | Download Scientific Diagram
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Figure 1 from Comparative study of contact topographies of 4.5kV SiC MPS diodes for optimizing the forward characteristics | Semantic Scholar
Advantages of the 1200 V SiC Schottky Diode with MPS Design - Technical Articles
Basic unit cell of a MPS diode | Download Scientific Diagram
Improved JBS structure to reduce the leakage current and increase the surge current capability | 臺灣東芝電子零組件股份有限公司 | 台灣
Cut a) and top view b) of the structure of an MPS-Diode. In b) Black:... | Download Scientific Diagram
MPS (Merged p-i-n/Schottky) Diode
Materials | Free Full-Text | The Impact of Process Conditions on Surge Current Capability of 1.2 kV SiC JBS and MPS Diodes
4.4.3.1 MPS Diode Structure
Advantages of the 1200 V SiC Schottky Diode with MPS Design
Silicon Carbide (SiC) Schottky Diodes - Wolfspeed | Mouser
Why all SiC Schottky diodes are not made equal | Efficiency Wins
Figure 1 from Ultrahigh-Voltage SiC MPS Diodes With Hybrid Unipolar/Bipolar Operation | Semantic Scholar
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The Wolfspeed MPS Diode Advantage - YouTube
SiC JBS/ MPS Diode I-V Operation
Parameter extraction method for a physics‐based lumped‐charge SiC MPS diode model - Li - 2020 - IET Power Electronics - Wiley Online Library
1.2-kV 4H-SiC Merged PiN Schottky Diode With Improved Surge Current Capability
Reverse Characteristic Model of SiC MPS Diode | SpringerLink
Design and Optimization of Silicon Carbide Schottky Diode - Technical Articles
Automotive-Grade Ideal Diode Controller with Reverse Polarity Protection: MPQ5850 | Video | MPS
A New 1200V SiC MPS Diode with Improved Performance and Ruggedness | Scientific.Net
GC15MPS12-247 - Genesic Semiconductor - Silicon Carbide Schottky Diode, MPS, Single
